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| 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1511 RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS Features * * * * * * * 400 MHz 28 VOLTS POUT = 70 WATTS GP = 8.4 dB GAIN MINIMUM EFFICIENCY 60% GOLD METALLIZATION COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1511 is a 28 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes diffused emitter resistors to achieve VSWR of 10:1 under operating conditions, and is internally input matched to optimize power gain and efficiency over the 225 - 400 MHz band. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C) Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Value 60 30 4.0 8.0 220 +200 -65 to +150 Unit V V V A W C C Thermal Data RTH(J-C) Thermal Resistance Junction-case 1.25 C/W MS1511.PDF 09-12-02 MS1511 ELECTRICAL SPECIFICATIONS (Tcase = 25 C) 25 Symbol BVCBO BVCEO BVEBO ICBO HFE IC = 50 mA IE = 50 mA IC = 10 mA VCB = 30 V VCE = 5 V STATIC Test Conditions Min. IE = 0mA IB = 0 mA IC = 0mA IE = 0 mA IC = 2 A 60 30 4.0 --20 Value Typ. ----------- Max. ------5 80 Unit V V V mA --- DYNAMIC Symbol POUT GP COB f = 400 MHz f = 400 MHz f = 1 MHz Test Conditions Min. PIN = 10 W PIN = 10 W VCB = 28 V VCE = 28 V VCE = 28 V 70 8.4 --- Value Typ. ------- Max. ----80 Unit W dB pF IMPEDANCE DATA FREQ 225 MHz 400 MHz PIN = 10W VCC = 28V ZIN() ) 1.44 - j0.87 1.29 + j0.87 ZCL() ) 1.70 - j2.6 3.0 + j0.87 MS1511.PDF 09-12-02 MS1511 PACKAGE MECHANICAL DATA MS1511.PDF 09-12-02 |
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